Bart van Wees
Zernike Institute of Advanced Materials
University of Groningen
Phone +31 50 363 4933
Bart van Wees is an expert in quantum electronic charge transport and spintronics in metal, semiconductor, insulator and graphene based systems. He is one of the pioneers of quantum ballistic transport in mesoscopic and nanostructures. Over 25 years ago he and his colleagues demonstrated the quantization of the conductance in units of 2e2/h in ballistic quantum point contacts. The expertise of his group includes nanodevice fabrication, dedicated charge and spin transport measurements, facilities for large magnetic field and low temperature measurements, modellling of spin and transport
J.J. van den Berg, W. Strupinski and B.J. van Wees, "Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states", arXiv: 1411.1193arXiv: 1411.1193, accepted for Phys. Rev. B. Rap Comm.
M. H. D. Guimarães, P. J. Zomer, J. Ingla-Aynés, J. C. Brant, N. Tombros, B. J. van Wees, "Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field", Phys. Rev. Lett. 113, 086602 (2014)
T. Maassen, J. J. van den Berg, E. H. Huisman, H. Dijkstra, F. Fromm, T. Seyller, B. J. van Wees, "Localized States Influence Spin Transport in Epitaxial Graphene", Phys. Rev. Lett. 110, 067209 (2013)
Thomas Maassen, J. Jasper van den Berg, Natasja IJbema, Felix Fromm, Thomas Seyller, Rositza Yakimova and Bart J. van Wees, "Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)", Nano Letters 12, 1498 (2012).
Nikolaos Tombros, Csaba Józsa, Mihaita Popinciuc, Harry T. Jonkman & Bart J. van Wees, "Electronic spin transport and spin precession in single graphene layers at room temperature", Nature 448, 571-574 (2007).