2019
Vasilyeva, G. Y., Smirnov, D., Vasilyev, Y. B., Greshnov, A. A., & Haug, R. J. (2019). Edge Doping in Graphene Devices on SiO2 Substrates. Semiconductors, 53(12), 1672-1676.
Vasilyeva, G. Y., Greshnov, A. A., Vasilyev, Y. B., Mikhailov, N. N., Usikova, A. A., & Haug, R. J. (2019). Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers. Semiconductors, 53(7), 930-935.
Wagner, T., Talkner, P., Bayer, J., Rugeramigabo, E. P., Hänggi, P., & Haug, R. J. (2019). Quantum stochastic resonance in an a.c.-driven single-electron quantum dot. Nature physics, 15(4), 330-334.
2018
Hoppe, B., Hindricks, K. D. J., Warwas, D. P., Schulze, H. A., Mohmeyer, A., Pinkvos, T. J., Zailskas, S., Krey, M. R., Belke, C., König, S., Fröba, M., Haug, R. J., & Behrens, P. (2018). Graphene-like metal–organic frameworks: morphology control, optimization of thin film electrical conductivity and fast sensing applications. CRYSTENGCOMM, 20(41), 6458-6471.
,Mohmeyer, A., Schaate, A., Brechtken, B., Rode, J. C., Warwas, D. P., Zahn, G., Haug, R. J., & Behrens, P. (2018). Delamination and Photochemical Modification of a Novel Two-Dimensional Zr-Based Metal–Organic Frameworks. Chemistry - a European journal, 24(49), 12848-12855.
2017
Bayer, J. C., Wagner, T., Rugeramigabo, E. P., & Haug, R. J. (2017). Charge reconfiguration in arrays of quantum dots. Physical Review B, 96(23), [235305].
Haug, R. J. (2017). Nanosafety. Chemie-Ingenieur-Technik, 89(3).
Pflaum, M., Kühn-Kauffeldt, M., Schmeckebier, S., Dipresa, D., Chauhan, K., Wiegmann, B., Haug, R. J., Schein, J., Haverich, A., & Korossis, S. (2017). Endothelialization and characterization of titanium dioxide-coated gas-exchange membranes for application in the bioartificial lung. Acta biomaterialia, 50, 510-521.
Rode, J. C., Smirnov, D., Belke, C., Schmidt, H., & Haug, R. J. (2017). Twisted Bilayer Graphene: Interlayer Configuration and Magnetotransport Signatures. Annalen der Physik, 529(11), [1700025].
Schurr, J., Kalmbach, C-C., Ahlers, F. J., Hohls, F., Kruskopf, M., Müller, A., Pierz, K., Bergsten, T., & Haug, R. J. (2017). Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect devices. Physical Review B, 96(15), [155443].
Splettstoesser, J., & Haug, R. J. (2017). Single-electron controlin solid state devices. Physica Status Solidi (B) Basic Research, 254(3), [1770217].
Vasileva, G. Y., Smirnov, D., Vasilyev, Y. B., Nestoklon, M. O., Averkiev, N. S., Novikov, S., Kaya, I. I., & Haug, R. J. (2017). Strongly temperature dependent resistance of meander-patterned graphene. Applied physics letters, 110(11), [113104].
,Wagner, T., Bayer, J. C., Rugeramigabo, E. P., & Haug, R. J. (2017). Optimal single-electron feedback control. Physica Status Solidi (B) Basic Research, 254(3), [1600701].
Wagner, T., Strasberg, P., Bayer, J. C., Rugeramigabo, E. P., Brandes, T., & Haug, R. J. (2017). Strong suppression of shot noise in a feedback-controlled single-electron transistor. Nature nanotechnology, 12(3), 218-222.
2016
Bockhorn, L., Velieva, A., Hakim, S., Wagner, T., Rugeramigabo, E. P., Schuh, D., Reichl, C., Wegscheider, W., & Haug, R. J. (2016). Influence of oval defects on transport properties in high-mobility two-dimensional electron gases. Applied physics letters, 108(9), [092103].
Heine, A. W., Tutuc, D., Zwicknagl, G., & Haug, R. J. (2016). Competition between Kondo Screening and Quantum Hall Edge Reconstruction. Physical review letters, 116(9), [096802].
Iñarrea, J., Bockhorn, L., & Haug, R. J. (2016). Negative huge magnetoresistance in high-mobility 2D electron gases: DC-current dependence. epl, 115(1), [17005].
Kalmbach, C. C., Ahlers, F. J., Schurr, J., Müller, A., Feilhauer, J., Kruskopf, M., Pierz, K., Hohls, F., & Haug, R. J. (2016). Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene. Physical Review B, 94(20), [205430].
Kotzian, M., Gallego-Marcos, F., Platero, G., & Haug, R. J. (2016). Channel blockade in a two-path triple-quantum-dot system. Physical Review B, 94(3), [035442].
Rode, J. C., Smirnov, D., Schmidt, H., & Haug, R. J. (2016). Berry phase transition in twisted bilayer graphene. 2D Materials, 3(3), [035005].