Manuscript accepted for publication in Nano Letters

Our Manuscript "A solid-state source of single and entangled photons at diamond SiV-center transitions operating at 80K" has been accepted for publication.

In the paper, we report an advance in the development of quantum light sources. Efficient single and entangled photon sources as well as quantum memories are required for long-haul quantum communication applications based on quantum repeaters. Using local droplet etching and nanohole infilling, we have epitaxially grown novel GaAs quantum dots emitting at 736.2 ± 1.7 nm. Their emission wavelength is close to the zero phonon line transition in silicon vacancy centres in diamond, which are a promising quantum memory platform. At 4 K, the fabricated GaAs quantum dots emit high purity single photons (g⁽²⁾(0) = 0.07 ± 0.02) as well as polarisation-entangled photon pairs with a high entanglement fidelity of 0.73 ± 0.09. They provide a great opportunity for first experiments on the coupling of GaAs quantum dots to silicon vacancy centres in diamond. The realisation of solid-state quantum repeaters is of great importance due to their scalability and compatibility with state-of-the-art semiconductor technology. A high single-photon purity of g⁽²⁾(0) = 0.11 ± 0.01 is maintained even at 80 K, above the temperature of liquid nitrogen, extending the real-world practical application.