Current research topics
Defects in semiconductors for photovoltaics
- Light-induced recombination centres
- Interaction of impurities
- Spatially resolved analysis of recombination and trapping centers
![](https://www.fkp.uni-hannover.de/fileadmin/_processed_/6/0/csm_ISFH-01-2018-2339_a3b5c99ad8.jpeg)
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New characterization methods
- Temperature and injection dependent charge carrier lifetime spectroscopy
- Spatially resolved measurement of charge carrier lifetimes, trap densities and energy levels using camera-based methods (IR, PL)
- Time and temperature dependent measurement of charge carrier lifetimes and solar cell parameters to analyze the kinetics of defect reactions
- Combined corona lifetime method for interface characterization
![](https://www.fkp.uni-hannover.de/fileadmin/_processed_/2/4/csm_DGF-06599-ISFH_7d7963bde9.jpg)
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Surface passivation and selective coatings
- Low temperature surface passivation (z.B. a-SiNx, a-Si, Al2O3, …)
- Charge carrier selective layers (PEDOT:PSS, TiOx…)
- Analysis of the fundamental physical passivation mechanisms
- Characterization of interface properties (density of states, recombination)
- Theoretical modeling of surface recombination
![](https://www.fkp.uni-hannover.de/fileadmin/_processed_/c/4/csm_ISFH-01-2018-2255_1_54be3b58bd.jpeg)
![](https://www.fkp.uni-hannover.de/fileadmin/user_upload/ISFH-01-2018-2255_1.jpeg)
![](https://www.fkp.uni-hannover.de/fileadmin/user_upload/ISFH-01-2018-2255_1.jpeg)
The experimental work of AG Schmidt takes place mainly at the Institute for Solar Energy Research Hamelin (ISFH)